q?v~zy??q?v?_ra]~???qcabdq HFS8N70U bv dss = 700 v r ds(on) typ =1.3
i d =7.5 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 22.0 nc (typ.) ? extended safe operating area ? lower r ds(on) :1.3
7 \ s # 9 gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 e unless otherwise specified HFS8N70U 700v n-channel mosfet symbol parameter value units v dss drain-source voltage 700 v i d drain current ? continuous (t c = 25 e ) 7.5 * a drain current ? continuous (t c = 100 e ) 4.7 * a i dm drain current ? pulsed (note 1) 30 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 280 mj i ar avalanche current (note 1) 7.5 a e ar repetitive avalanche energy (note 1) 4.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 48 w 0.38 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 2.6 e /w r ja junction-to-ambient -- 62.5 march 2013 2 1 3 to-220f * drain current limited by maximum junction temperature
q?v~zy??q?v?_ra]~???qcabdq HFS8N70U package marking and odering information device marking week marking package packing quantity rohs status HFS8N70U ywwx to-220f(a) tube 50 pb free HFS8N70Us ywwx to-220f(b) tube 50 pb free HFS8N70U ywwxg to-220f(a) tube 50 halogen free HFS8N70Us ywwxg to-220f(b) tube 50 halogen free t to-220f(a) : dual gauge, to-220f(b) : single gauge notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=9.0mh, i as =7.5a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? 7.5a, di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |